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MMBZ27VCWT1G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) @ T L ≤ 25 ° C
Total Power Dissipation on FR ? 5 Board (Note 2) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance Junction ? to ? Ambient
Junction and Storage Temperature Range
Symbol
P pk
° P D °
R q JA
T J , T stg
Value
40
200
1.6
618
? 55 to +150
Unit
Watts
° mW °
mW/ ° C
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derate above T A = 25 ° C per Figure 5.
2. FR ? 5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I PP
Maximum Reverse Peak Pulse Current
I F
I
I R V F
V C
V RWM
Clamping Voltage @ I PP
Working Peak Reverse Voltage
V C V BR V RWM
I T
V
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
I T
V BR
I F
V F
Test Current
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V F = 1.1 V Max @ I F = 200 mA)
Breakdown Voltage
V C @ I PP (Note 4)
Device
Device
Marking
V RWM
Volts
I R @ V RWM
nA
V BR (Note 3) (V)
Min Nom Max
@ I T
mA
V C
V
I PP
A
V BR
mV/ 5 C
MMBZ27VCWT1G
AC
22
50
25.65
27
28.35
1.0
38
1.0
26
3. V BR measured at pulse test current I T at an ambient temperature of 25 ° C.
4. Surge current waveform per Figure 4 and derate per Figure 5
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